Graphene-oxide doped PEDOT:PSS as a superior hole transport material for high-efficiency perovskite solar cell

Inverted perovskite solar cells have attracted a great deal of attention due to its high power conversion efficiency, simple configuration, and low-cost processing. The hole transport material (HTM) is a crucial factor in high performance inverted perovskite solar cell. However, the hole mobility for most common of HTM is too low to matching perovskite materials. Herein, we report a superior HTM with high hole mobility to significantly improve solar cell efficiency. Upon doing the commonly used PEDOT:PSS HTM by graphene oxide (GO), its hole mobility is increased from 5.55 × 10⁻⁵ to 1.57 × 10⁻⁴ cm² V⁻¹ s⁻¹, leading to efficient hole extraction and low current leakage, therefore 20% higher power conversion efficiency comparing to the control device without the GO doping. The development open the opportunities for efficient HTMs based on the two-dimensional materials in the perovskite solar cells.