Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates

Yikai Zheng, Dipanjan Sen, Sarbashis Das, Saptarshi Das

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in graphene-based electronic devices and sensors. However, the poor ON/OFF current ratio observed in graphene field-effect transistors has stymied its use in many applications. Here, we introduce a graphene strain-effect transistor (GSET) with a colossal ON/OFF current ratio in excess of 107 by exploiting strain-induced reversible nanocrack formation in the source/drain metal contacts with the help of a piezoelectric gate stack. GSETs also exhibit steep switching with a subthreshold swing (SS) < 1 mV/decade averaged over ∼6 orders of magnitude change in the source-to-drain current for both electron and hole branch amidst a finite hysteresis window. We also demonstrate high device yield and strain endurance for GSETs. We believe that GSETs can significantly expand the application space for graphene-based technologies beyond what is currently envisioned.

Original languageEnglish (US)
Pages (from-to)2536-2543
Number of pages8
JournalNano letters
Volume23
Issue number7
DOIs
StatePublished - Apr 12 2023

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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