TY - JOUR
T1 - Growth and characterization of α-Ga2O3on sapphire and nanocrystalline β-Ga2O3on diamond substrates by halide vapor phase epitaxy
AU - Modak, Sushrut
AU - Lundh, James Spencer
AU - Al-Mamun, Nahid Sultan
AU - Chernyak, Leonid
AU - Haque, Aman
AU - Tu, Thieu Quang
AU - Kuramata, Akito
AU - Tadjer, Marko J.
AU - Pearton, Stephen J.
N1 - Publisher Copyright:
© 2022 Author(s).
PY - 2022/12/1
Y1 - 2022/12/1
N2 - Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
AB - Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
UR - https://www.scopus.com/pages/publications/85143371664
UR - https://www.scopus.com/inward/citedby.url?scp=85143371664&partnerID=8YFLogxK
U2 - 10.1116/6.0002115
DO - 10.1116/6.0002115
M3 - Article
AN - SCOPUS:85143371664
SN - 0734-2101
VL - 40
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 6
M1 - 062703
ER -