Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

H. Luo; Nitin Samarth; A. Yin; A. Pareek; M. Dobrowolska; J. K. Furdyna; K. Mahalingam; N. Otsuka; F. C. Peiris; J. R. Buschert

doi:10.1007/BF02661615

Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

H. Luo, Nitin Samarth, A. Yin, A. Pareek, M. Dobrowolska, J. K. Furdyna, K. Mahalingam, N. Otsuka, F. C. Peiris, J. R. Buschert

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13 Scopus citations

Abstract

We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

Original language	English (US)
Pages (from-to)	467-471
Number of pages	5
Journal	Journal of Electronic Materials
Volume	22
Issue number	5
DOIs	https://doi.org/10.1007/BF02661615
State	Published - May 1 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Growth and characterization of digital alloy quantum wells of CdSe/ZnSe",

abstract = "We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.",

author = "H. Luo and Nitin Samarth and A. Yin and A. Pareek and M. Dobrowolska and Furdyna, {J. K.} and K. Mahalingam and N. Otsuka and Peiris, {F. C.} and Buschert, {J. R.}",

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T1 - Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

AU - Luo, H.

AU - Samarth, Nitin

AU - Yin, A.

AU - Pareek, A.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Mahalingam, K.

AU - Otsuka, N.

AU - Peiris, F. C.

AU - Buschert, J. R.

PY - 1993/5/1

Y1 - 1993/5/1

N2 - We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

AB - We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

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EP - 471

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

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All Science Journal Classification (ASJC) codes

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