Abstract
A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1266-1269 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2002 |
| Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering