TY - JOUR
T1 - Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels
AU - Ranga, Praneeth
AU - Bhattacharyya, Arkka
AU - Chmielewski, Adrian
AU - Roy, Saurav
AU - Sun, Rujun
AU - Scarpulla, Michael A.
AU - Alem, Nasim
AU - Krishnamoorthy, Sriram
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/2
Y1 - 2021/2
N2 - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3
AB - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3
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U2 - 10.35848/1882-0786/abd675
DO - 10.35848/1882-0786/abd675
M3 - Article
AN - SCOPUS:85100386754
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 025501
ER -