Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels

Praneeth Ranga; Arkka Bhattacharyya; Adrian Chmielewski; Saurav Roy; Rujun Sun; Michael A. Scarpulla; Nasim Alem; Sriram Krishnamoorthy

doi:10.35848/1882-0786/abd675

Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al_xGa_1−x)₂O₃/β-Ga₂O₃ heterostructure channels

Praneeth Ranga
, Arkka Bhattacharyya
, Adrian Chmielewski
, Saurav Roy
, Rujun Sun
, Michael A. Scarpulla
, Nasim Alem
, Sriram Krishnamoorthy

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al_xGa₁−_x)₂O₃/β-Ga₂O₃ modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(Al_xGa₁-_x)₂O₃ barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 10¹³ cm⁻² and a mobility of 111 cm² V⁻¹ s⁻¹ is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm⁻¹ and an on-off ratio of 8 × 10⁶. A sheet resistance of 5.3

Original language	English (US)
Article number	025501
Journal	Applied Physics Express
Volume	14
Issue number	2
DOIs	https://doi.org/10.35848/1882-0786/abd675
State	Published - Feb 2021

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.35848/1882-0786/abd675

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title = "Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels",

abstract = "We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3",

author = "Praneeth Ranga and Arkka Bhattacharyya and Adrian Chmielewski and Saurav Roy and Rujun Sun and Scarpulla, \{Michael A.\} and Nasim Alem and Sriram Krishnamoorthy",

note = "Publisher Copyright: {\textcopyright} 2021 The Japan Society of Applied Physics",

year = "2021",

month = feb,

doi = "10.35848/1882-0786/abd675",

language = "English (US)",

volume = "14",

journal = "Applied Physics Express",

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T1 - Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels

AU - Ranga, Praneeth

AU - Bhattacharyya, Arkka

AU - Chmielewski, Adrian

AU - Roy, Saurav

AU - Sun, Rujun

AU - Scarpulla, Michael A.

AU - Alem, Nasim

AU - Krishnamoorthy, Sriram

PY - 2021/2

Y1 - 2021/2

N2 - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3

AB - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3

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DO - 10.35848/1882-0786/abd675

M3 - Article

AN - SCOPUS:85100386754

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VL - 14

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 025501

ER -

Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al_xGa_1−x)₂O₃/β-Ga₂O₃ heterostructure channels

Abstract

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