Growth and characterization of Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films using solid source MOCVD techniques

S. Y. Lee; M. C.C. Custodio; Han Jin Lim; R. S. Feigelson; J. P. Maria; S. Trolier-McKinstry

doi:10.1016/S0022-0248(01)00796-5

Growth and characterization of Pb(Mg_1/3Nb_2/3)O₃ and Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films using solid source MOCVD techniques

S. Y. Lee, M. C.C. Custodio, Han Jin Lim, R. S. Feigelson, J. P. Maria, S. Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Epitaxial thin films of Pb(Mg_1/3Nb_2/3)O₃ (PMN) and Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) were deposited on (0 0 1) SrTiO₃ and SrRuO₃/SrTiO₃ single crystal substrates at 700°C by the solid-source MOCVD method, using tetramethylheptanedionate (THD) sources of Pb, Mg, Nb, and Ti. Sputtered SrRuO₃ was employed as an epitaxial bottom electrode layer so that electrical property measurements could be made. Pure PMN films were prepared using pre-mixed source material (5.5 moles of Pb(THD)₄,1 mole of Mg(THD)₂ and 2 moles of Nb(THD)₄). XRD results indicated that these films were single phase and had the pervoskite structure. Rutherford Backscattering showed that Pb/Mg/Nb/O=18%/7%/13%/62%. Films of PMN-10%PT and PMN-20%PT films were also epitaxially deposited on the same substrates. The dielectric constants for these films were in the range 1200-1500 and 600-700, respectively. A 150 nm thick PMN-20% PT film was strongly dispersive. The dielectric constant for a 150 nm thick film decreased from 700 at 1 kHz to 550 at 100 kHz. The dielectric loss factor increased from 0.15 to 0.4 with increasing frequency.

Original language	English (US)
Pages (from-to)	247-253
Number of pages	7
Journal	Journal of Crystal Growth
Volume	226
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(01)00796-5
State	Published - Jun 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(01)00796-5

Cite this

@article{743250713d3142d29c13ef24c50bd87b,

title = "Growth and characterization of Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films using solid source MOCVD techniques",

abstract = "Epitaxial thin films of Pb(Mg1/3Nb2/3)O3 (PMN) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) were deposited on (0 0 1) SrTiO3 and SrRuO3/SrTiO3 single crystal substrates at 700°C by the solid-source MOCVD method, using tetramethylheptanedionate (THD) sources of Pb, Mg, Nb, and Ti. Sputtered SrRuO3 was employed as an epitaxial bottom electrode layer so that electrical property measurements could be made. Pure PMN films were prepared using pre-mixed source material (5.5 moles of Pb(THD)4,1 mole of Mg(THD)2 and 2 moles of Nb(THD)4). XRD results indicated that these films were single phase and had the pervoskite structure. Rutherford Backscattering showed that Pb/Mg/Nb/O=18%/7%/13%/62%. Films of PMN-10%PT and PMN-20%PT films were also epitaxially deposited on the same substrates. The dielectric constants for these films were in the range 1200-1500 and 600-700, respectively. A 150 nm thick PMN-20% PT film was strongly dispersive. The dielectric constant for a 150 nm thick film decreased from 700 at 1 kHz to 550 at 100 kHz. The dielectric loss factor increased from 0.15 to 0.4 with increasing frequency.",

author = "Lee, {S. Y.} and Custodio, {M. C.C.} and Lim, {Han Jin} and Feigelson, {R. S.} and Maria, {J. P.} and S. Trolier-McKinstry",

note = "Funding Information: This work was supported principally by DARPA through the Center for Nonlinear Optical Materials, and additionally by the NSF/MRSEC program through the Center for Materials Research, at Stanford University. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.",

year = "2001",

month = jun,

doi = "10.1016/S0022-0248(01)00796-5",

language = "English (US)",

volume = "226",

pages = "247--253",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Growth and characterization of Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films using solid source MOCVD techniques

AU - Lee, S. Y.

AU - Custodio, M. C.C.

AU - Lim, Han Jin

AU - Feigelson, R. S.

AU - Maria, J. P.

AU - Trolier-McKinstry, S.

N1 - Funding Information: This work was supported principally by DARPA through the Center for Nonlinear Optical Materials, and additionally by the NSF/MRSEC program through the Center for Materials Research, at Stanford University. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.

PY - 2001/6

Y1 - 2001/6

N2 - Epitaxial thin films of Pb(Mg1/3Nb2/3)O3 (PMN) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) were deposited on (0 0 1) SrTiO3 and SrRuO3/SrTiO3 single crystal substrates at 700°C by the solid-source MOCVD method, using tetramethylheptanedionate (THD) sources of Pb, Mg, Nb, and Ti. Sputtered SrRuO3 was employed as an epitaxial bottom electrode layer so that electrical property measurements could be made. Pure PMN films were prepared using pre-mixed source material (5.5 moles of Pb(THD)4,1 mole of Mg(THD)2 and 2 moles of Nb(THD)4). XRD results indicated that these films were single phase and had the pervoskite structure. Rutherford Backscattering showed that Pb/Mg/Nb/O=18%/7%/13%/62%. Films of PMN-10%PT and PMN-20%PT films were also epitaxially deposited on the same substrates. The dielectric constants for these films were in the range 1200-1500 and 600-700, respectively. A 150 nm thick PMN-20% PT film was strongly dispersive. The dielectric constant for a 150 nm thick film decreased from 700 at 1 kHz to 550 at 100 kHz. The dielectric loss factor increased from 0.15 to 0.4 with increasing frequency.

AB - Epitaxial thin films of Pb(Mg1/3Nb2/3)O3 (PMN) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) were deposited on (0 0 1) SrTiO3 and SrRuO3/SrTiO3 single crystal substrates at 700°C by the solid-source MOCVD method, using tetramethylheptanedionate (THD) sources of Pb, Mg, Nb, and Ti. Sputtered SrRuO3 was employed as an epitaxial bottom electrode layer so that electrical property measurements could be made. Pure PMN films were prepared using pre-mixed source material (5.5 moles of Pb(THD)4,1 mole of Mg(THD)2 and 2 moles of Nb(THD)4). XRD results indicated that these films were single phase and had the pervoskite structure. Rutherford Backscattering showed that Pb/Mg/Nb/O=18%/7%/13%/62%. Films of PMN-10%PT and PMN-20%PT films were also epitaxially deposited on the same substrates. The dielectric constants for these films were in the range 1200-1500 and 600-700, respectively. A 150 nm thick PMN-20% PT film was strongly dispersive. The dielectric constant for a 150 nm thick film decreased from 700 at 1 kHz to 550 at 100 kHz. The dielectric loss factor increased from 0.15 to 0.4 with increasing frequency.

UR - http://www.scopus.com/inward/record.url?scp=0035365962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035365962&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00796-5

DO - 10.1016/S0022-0248(01)00796-5

M3 - Article

AN - SCOPUS:0035365962

SN - 0022-0248

VL - 226

SP - 247

EP - 253

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

ER -

Growth and characterization of Pb(Mg_1/3Nb_2/3)O₃ and Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films using solid source MOCVD techniques

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this