Growth and characterization of unintentionally doped GaSb nanowires

Robert A. Burke, Xiaojun Weng, Meng Wei Kuo, Young Wook Song, Anne M. Itsuno, Theresa S. Mayer, Steven M. Durbin, Roger J. Reeves, Joan M. Redwing

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor-liquid-solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 Ω cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.

Original languageEnglish (US)
Pages (from-to)355-364
Number of pages10
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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