Growth and characterization of α-Ga2O3on sapphire and nanocrystalline β-Ga2O3on diamond substrates by halide vapor phase epitaxy

Sushrut Modak, James Spencer Lundh, Nahid Sultan Al-Mamun, Leonid Chernyak, Aman Haque, Thieu Quang Tu, Akito Kuramata, Marko J. Tadjer, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.

Original languageEnglish (US)
Article number062703
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume40
Issue number6
DOIs
StatePublished - Dec 1 2022

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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