TY - JOUR
T1 - Growth and electrical properties of (Mn,F) co-doped 0.92Pb(Zn 1/3Nb2/3)O3-0.08PbTiO3 single crystal
AU - Zhang, Shujun
AU - Lebrun, Laurent
AU - Randall, Clive A.
AU - Shrout, Thomas R.
N1 - Funding Information:
The research is supported by ONR and DARPA. S.J. Zhang is indebted to Ms. R. Xia for the samples preparation.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/6/15
Y1 - 2004/6/15
N2 - The growth and characterization of (Mn,F) doped Pb(Zn1/3Nb 2/3)O3-PbTiO3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along 〈001〉 direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of 〈001〉 oriented doped crystal measured at 1Hz and 10kV/cm field are about 27μC/cm2 and 4.2kV/cm, respectively. The room temperature mechanical quality factor is ∼300. Piezoelectric coefficient of 〈001〉 oriented doped crystal is higher than 3500pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti4+ position, shifting the crystal composition to higher PT content.
AB - The growth and characterization of (Mn,F) doped Pb(Zn1/3Nb 2/3)O3-PbTiO3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along 〈001〉 direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of 〈001〉 oriented doped crystal measured at 1Hz and 10kV/cm field are about 27μC/cm2 and 4.2kV/cm, respectively. The room temperature mechanical quality factor is ∼300. Piezoelectric coefficient of 〈001〉 oriented doped crystal is higher than 3500pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti4+ position, shifting the crystal composition to higher PT content.
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U2 - 10.1016/j.jcrysgro.2004.03.063
DO - 10.1016/j.jcrysgro.2004.03.063
M3 - Article
AN - SCOPUS:2942601666
SN - 0022-0248
VL - 267
SP - 204
EP - 212
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -