Growth and high-temperature electromechanical properties of Ca3 NbX3 Si2 O14 (X = Ga and Al) piezoelectric crystals

Shujun Zhang; Haikuan Kong; Ru Xia; Yanqing Zheng; Jun Xin; Thomas R. Shrout

doi:10.1016/j.ssc.2009.12.009

Growth and high-temperature electromechanical properties of Ca₃ NbX₃ Si₂ O₁₄ (X = Ga and Al) piezoelectric crystals

Shujun Zhang, Haikuan Kong, Ru Xia, Yanqing Zheng, Jun Xin, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Piezoelectric single crystals of Ca₃NbX₃Si₂O₁₄ (CNXS, X=Ga and Al) with ordered langasite structure were successfully grown using the Czochralski technique. The structure was analyzed by X-ray powder diffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS, due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties were studied as function of temperature from 30 ^{{ring operator}}C to 900 ^{{ring operator}}C, showing a stable temperature-dependent behavior. Of particular significant is their high mechanical quality factor and electrical resistivity at elevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperature applications.

Original language	English (US)
Pages (from-to)	435-438
Number of pages	4
Journal	Solid State Communications
Volume	150
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2009.12.009
State	Published - Mar 1 2010

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2009.12.009

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@article{2d10ca3295b64df49e2d9798d93fd970,

title = "Growth and high-temperature electromechanical properties of Ca3 NbX3 Si2 O14 (X = Ga and Al) piezoelectric crystals",

abstract = "Piezoelectric single crystals of Ca3NbX3Si2O14 (CNXS, X=Ga and Al) with ordered langasite structure were successfully grown using the Czochralski technique. The structure was analyzed by X-ray powder diffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS, due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties were studied as function of temperature from 30 {ring operator}C to 900 {ring operator}C, showing a stable temperature-dependent behavior. Of particular significant is their high mechanical quality factor and electrical resistivity at elevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperature applications.",

author = "Shujun Zhang and Haikuan Kong and Ru Xia and Yanqing Zheng and Jun Xin and Shrout, {Thomas R.}",

year = "2010",

month = mar,

day = "1",

doi = "10.1016/j.ssc.2009.12.009",

language = "English (US)",

volume = "150",

pages = "435--438",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9-10",

}

TY - JOUR

T1 - Growth and high-temperature electromechanical properties of Ca3 NbX3 Si2 O14 (X = Ga and Al) piezoelectric crystals

AU - Zhang, Shujun

AU - Kong, Haikuan

AU - Xia, Ru

AU - Zheng, Yanqing

AU - Xin, Jun

AU - Shrout, Thomas R.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Piezoelectric single crystals of Ca3NbX3Si2O14 (CNXS, X=Ga and Al) with ordered langasite structure were successfully grown using the Czochralski technique. The structure was analyzed by X-ray powder diffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS, due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties were studied as function of temperature from 30 {ring operator}C to 900 {ring operator}C, showing a stable temperature-dependent behavior. Of particular significant is their high mechanical quality factor and electrical resistivity at elevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperature applications.

AB - Piezoelectric single crystals of Ca3NbX3Si2O14 (CNXS, X=Ga and Al) with ordered langasite structure were successfully grown using the Czochralski technique. The structure was analyzed by X-ray powder diffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS, due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties were studied as function of temperature from 30 {ring operator}C to 900 {ring operator}C, showing a stable temperature-dependent behavior. Of particular significant is their high mechanical quality factor and electrical resistivity at elevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperature applications.

UR - http://www.scopus.com/inward/record.url?scp=75749092245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75749092245&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2009.12.009

DO - 10.1016/j.ssc.2009.12.009

M3 - Article

AN - SCOPUS:75749092245

SN - 0038-1098

VL - 150

SP - 435

EP - 438

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

Growth and high-temperature electromechanical properties of Ca₃ NbX₃ Si₂ O₁₄ (X = Ga and Al) piezoelectric crystals

Abstract

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