Growth and piezoelectric properties of Pb(Yb 1/2Nb 1/2)O 3-PbTiO 3 epitaxial films

Takeshi Yoshimura; Susan Trolier-Mckinstry

doi:10.1063/1.1505997

Growth and piezoelectric properties of Pb(Yb _1/2Nb _1/2)O ₃-PbTiO ₃ epitaxial films

Takeshi Yoshimura
, Susan Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Epitaxial films of (1-x)Pb(Yb _1/2Nb _1/2)O ₃-xPbTiO ₃ (PYbN-PT, x=0.4,0.5) with SrRuO ₃ bottom electrodes were prepared on (100)LaAlO ₃, (100)SrTiO ₃, and (111)SrTiO ₃ substrates by pulsed laser deposition. It was found that vacuum annealing of the SrRuO ₃ before the deposition of PYbN-PT facilitated growth of perovskite PYbN-PT. With optimized growth conditions, (001) and (111) PYbN-PT epitaxial films with good phase purity were obtained in a range of 650-660 and 600-620 °C, respectively. The ferroelectric and transverse piezoelectric properties of these PYbN-PT films were investigated. In the (001) PYbN-PT (50/50) film, the highest remanent polarization (∼30μC/cm ²) and e _31,f piezoelectric coefficient (-14C/m ²) were observed. The transition temperature of the (001) PYbN-PT (50/50) film was near 380 °C.

Original language	English (US)
Pages (from-to)	3979-3984
Number of pages	6
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1505997
State	Published - Oct 1 2002

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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@article{be4fb8a920894357bbb11a375252f14c,

title = "Growth and piezoelectric properties of Pb(Yb 1/2Nb 1/2)O 3-PbTiO 3 epitaxial films",

abstract = "Epitaxial films of (1-x)Pb(Yb 1/2Nb 1/2)O 3-xPbTiO 3 (PYbN-PT, x=0.4,0.5) with SrRuO 3 bottom electrodes were prepared on (100)LaAlO 3, (100)SrTiO 3, and (111)SrTiO 3 substrates by pulsed laser deposition. It was found that vacuum annealing of the SrRuO 3 before the deposition of PYbN-PT facilitated growth of perovskite PYbN-PT. With optimized growth conditions, (001) and (111) PYbN-PT epitaxial films with good phase purity were obtained in a range of 650-660 and 600-620 °C, respectively. The ferroelectric and transverse piezoelectric properties of these PYbN-PT films were investigated. In the (001) PYbN-PT (50/50) film, the highest remanent polarization (∼30μC/cm 2) and e 31,f piezoelectric coefficient (-14C/m 2) were observed. The transition temperature of the (001) PYbN-PT (50/50) film was near 380 °C.",

author = "Takeshi Yoshimura and Susan Trolier-Mckinstry",

year = "2002",

month = oct,

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doi = "10.1063/1.1505997",

language = "English (US)",

volume = "92",

pages = "3979--3984",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Growth and piezoelectric properties of Pb(Yb 1/2Nb 1/2)O 3-PbTiO 3 epitaxial films

AU - Yoshimura, Takeshi

AU - Trolier-Mckinstry, Susan

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Epitaxial films of (1-x)Pb(Yb 1/2Nb 1/2)O 3-xPbTiO 3 (PYbN-PT, x=0.4,0.5) with SrRuO 3 bottom electrodes were prepared on (100)LaAlO 3, (100)SrTiO 3, and (111)SrTiO 3 substrates by pulsed laser deposition. It was found that vacuum annealing of the SrRuO 3 before the deposition of PYbN-PT facilitated growth of perovskite PYbN-PT. With optimized growth conditions, (001) and (111) PYbN-PT epitaxial films with good phase purity were obtained in a range of 650-660 and 600-620 °C, respectively. The ferroelectric and transverse piezoelectric properties of these PYbN-PT films were investigated. In the (001) PYbN-PT (50/50) film, the highest remanent polarization (∼30μC/cm 2) and e 31,f piezoelectric coefficient (-14C/m 2) were observed. The transition temperature of the (001) PYbN-PT (50/50) film was near 380 °C.

AB - Epitaxial films of (1-x)Pb(Yb 1/2Nb 1/2)O 3-xPbTiO 3 (PYbN-PT, x=0.4,0.5) with SrRuO 3 bottom electrodes were prepared on (100)LaAlO 3, (100)SrTiO 3, and (111)SrTiO 3 substrates by pulsed laser deposition. It was found that vacuum annealing of the SrRuO 3 before the deposition of PYbN-PT facilitated growth of perovskite PYbN-PT. With optimized growth conditions, (001) and (111) PYbN-PT epitaxial films with good phase purity were obtained in a range of 650-660 and 600-620 °C, respectively. The ferroelectric and transverse piezoelectric properties of these PYbN-PT films were investigated. In the (001) PYbN-PT (50/50) film, the highest remanent polarization (∼30μC/cm 2) and e 31,f piezoelectric coefficient (-14C/m 2) were observed. The transition temperature of the (001) PYbN-PT (50/50) film was near 380 °C.

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DO - 10.1063/1.1505997

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JO - Journal of Applied Physics

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IS - 7

ER -

Growth and piezoelectric properties of Pb(Yb _1/2Nb _1/2)O ₃-PbTiO ₃ epitaxial films

Abstract

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