Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• GaN Nanowires 100%
• Process Modeling 100%
• Growth Modeling 100%
• Nanowire Growth 60%
• V(III) 40%
• Ammonia 20%
• Process Conditions 20%
• Growth Temperature 20%
• Reactor 20%
• Temperature Range 20%
• Computational Fluid Dynamics 20%
• GaN Thin Film 20%
• Intermediate Species 20%
• Gas Phase 20%
• Thin Film Deposition 20%
• Photoluminescence Measurements 20%
• Sapphire Substrate 20%
• Dynamic Base 20%
• Emission Intensity 20%
• Deposition Rate 20%
• Growth Direction 20%
• Near-band-edge Emission 20%
• Furnace Temperature 20%

Material Science

• Chemical Vapor Deposition 100%
• Nanowire 100%
• Thin Films 16%
• Photoluminescence 16%
• Luminescence 16%
• Sapphire 16%
• Thin Film Deposition 16%
• Computational Fluid Dynamics 16%
• Reactor Modeling 16%

Chemical Engineering

• Nanowires 100%
• Metallorganic Chemical Vapor Deposition 100%
• Growth Temperature 16%
• Deposition Rate 16%