Growth and properties of (001) BiScO3-PbTiO3 epitaxial films

Takeshi Yoshimura; Susan Trolier-Mckinstry

doi:10.1063/1.1507352

Growth and properties of (001) BiScO₃-PbTiO₃ epitaxial films

Takeshi Yoshimura
, Susan Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The ferroelectric and piezoelectric properties of (001) BiScO ₃-PbTiO₃ epitaxial films were investigated. Epitaxial films 1 μm thick were grown by pulsed laser deposition using ceramic targets of (1-x)BiScO₃-xPbTiO₃ (x=0.5) at substrate temperatures of 700°C on (100) SrRuO₃/(100)LaAlO₃ substrates. Well-saturated hysteresis loops with a remanent polarization of 36 μC/cm ² were observed. The films had a room temperature dielectric constant of 800, tanδ=0.09 and a maximum permittivity of 3600 at 460°C. The room temperature e_31f piezoelectric coefficient was -9 C/m ². The piezoelectric properties obtained were comparable to those of Pb(Zr,Ti)O₃ or relaxor ferroelectric-PbTiO₃ films.

Original language	English (US)
Pages (from-to)	2065-2066
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	11
DOIs	https://doi.org/10.1063/1.1507352
State	Published - Sep 9 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Growth and properties of (001) BiScO3-PbTiO3 epitaxial films",

abstract = "The ferroelectric and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films were investigated. Epitaxial films 1 μm thick were grown by pulsed laser deposition using ceramic targets of (1-x)BiScO3-xPbTiO3 (x=0.5) at substrate temperatures of 700°C on (100) SrRuO3/(100)LaAlO3 substrates. Well-saturated hysteresis loops with a remanent polarization of 36 μC/cm 2 were observed. The films had a room temperature dielectric constant of 800, tanδ=0.09 and a maximum permittivity of 3600 at 460°C. The room temperature e31f piezoelectric coefficient was -9 C/m 2. The piezoelectric properties obtained were comparable to those of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.",

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T1 - Growth and properties of (001) BiScO3-PbTiO3 epitaxial films

AU - Yoshimura, Takeshi

AU - Trolier-Mckinstry, Susan

PY - 2002/9/9

Y1 - 2002/9/9

N2 - The ferroelectric and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films were investigated. Epitaxial films 1 μm thick were grown by pulsed laser deposition using ceramic targets of (1-x)BiScO3-xPbTiO3 (x=0.5) at substrate temperatures of 700°C on (100) SrRuO3/(100)LaAlO3 substrates. Well-saturated hysteresis loops with a remanent polarization of 36 μC/cm 2 were observed. The films had a room temperature dielectric constant of 800, tanδ=0.09 and a maximum permittivity of 3600 at 460°C. The room temperature e31f piezoelectric coefficient was -9 C/m 2. The piezoelectric properties obtained were comparable to those of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.

AB - The ferroelectric and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films were investigated. Epitaxial films 1 μm thick were grown by pulsed laser deposition using ceramic targets of (1-x)BiScO3-xPbTiO3 (x=0.5) at substrate temperatures of 700°C on (100) SrRuO3/(100)LaAlO3 substrates. Well-saturated hysteresis loops with a remanent polarization of 36 μC/cm 2 were observed. The films had a room temperature dielectric constant of 800, tanδ=0.09 and a maximum permittivity of 3600 at 460°C. The room temperature e31f piezoelectric coefficient was -9 C/m 2. The piezoelectric properties obtained were comparable to those of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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Growth and properties of (001) BiScO₃-PbTiO₃ epitaxial films

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