TY - JOUR
T1 - Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films
AU - Ko, S. W.
AU - Yeo, H. G.
AU - Trolier-Mckinstry, S.
PY - 2009
Y1 - 2009
N2 - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.
AB - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.
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U2 - 10.1063/1.3250165
DO - 10.1063/1.3250165
M3 - Article
AN - SCOPUS:70350378209
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 162901
ER -