Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films

S. W. Ko; H. G. Yeo; S. Trolier-Mckinstry

doi:10.1063/1.3250165

Growth and properties of chemical solution deposited BiInO₃ - PbTiO₃ films

S. W. Ko
, H. G. Yeo
, S. Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO₃ - (1-x) PbTiO₃ (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO₃ seed layer, phase pure x BiInO₃ - (1-x) PbTiO ₃ (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO₃ -0.85 PbTiO₃ film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm ², respectively. The ferroelectric transition temperatures of the x BiInO₃ - (1-x) PbTiO₃ (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m².

Original language	English (US)
Article number	162901
Journal	Applied Physics Letters
Volume	95
Issue number	16
DOIs	https://doi.org/10.1063/1.3250165
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3250165

Cite this

@article{3dd0851601404ce58a3b310ddecf6bee,

title = "Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films",

abstract = "The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2\%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.",

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volume = "95",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films

AU - Ko, S. W.

AU - Yeo, H. G.

AU - Trolier-Mckinstry, S.

PY - 2009

Y1 - 2009

N2 - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

AB - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

UR - https://www.scopus.com/pages/publications/70350378209

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U2 - 10.1063/1.3250165

DO - 10.1063/1.3250165

M3 - Article

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SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162901

ER -

Growth and properties of chemical solution deposited BiInO₃ - PbTiO₃ films

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