Growth and reliability of thick gate oxide in U-trench for power MOSFET's

C. T. Wu; R. S. Ridley; G. Dolny; T. Grebs; C. Knoedler; S. Suliman; B. Venkataraman; O. Awadelkarim; J. Ruzyllo

Growth and reliability of thick gate oxide in U-trench for power MOSFET's

C. T. Wu, R. S. Ridley, G. Dolny, T. Grebs, C. Knoedler, S. Suliman, B. Venkataraman, O. Awadelkarim, J. Ruzyllo

Research output: Contribution to conference › Paper › peer-review

Abstract

Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

Original language	English (US)
Pages	149-152
Number of pages	4
State	Published - Jan 1 2002
Event	14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States Duration: Jun 4 2002 → Jun 7 2002

Other

Other	14th International Symposium on Power Semiconductor Devices and IC's 2002
Country/Territory	United States
City	Santa Fe, NM
Period	6/4/02 → 6/7/02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "Growth and reliability of thick gate oxide in U-trench for power MOSFET's",

abstract = "Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.",

author = "Wu, {C. T.} and Ridley, {R. S.} and G. Dolny and T. Grebs and C. Knoedler and S. Suliman and B. Venkataraman and O. Awadelkarim and J. Ruzyllo",

year = "2002",

month = jan,

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language = "English (US)",

pages = "149--152",

note = "14th International Symposium on Power Semiconductor Devices and IC's 2002 ; Conference date: 04-06-2002 Through 07-06-2002",

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T1 - Growth and reliability of thick gate oxide in U-trench for power MOSFET's

AU - Wu, C. T.

AU - Ridley, R. S.

AU - Dolny, G.

AU - Grebs, T.

AU - Knoedler, C.

AU - Suliman, S.

AU - Venkataraman, B.

AU - Awadelkarim, O.

AU - Ruzyllo, J.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

AB - Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

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M3 - Paper

AN - SCOPUS:0036045602

SP - 149

EP - 152

T2 - 14th International Symposium on Power Semiconductor Devices and IC's 2002

Y2 - 4 June 2002 through 7 June 2002

ER -

Growth and reliability of thick gate oxide in U-trench for power MOSFET's

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All Science Journal Classification (ASJC) codes

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