Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy

Material Science

• Film 100%
• Thin Films 100%
• Molecular Beam Epitaxy 100%
• Dislocation (Crystal) 100%
• Tin 50%
• Film Growth 50%
• Ferroelectricity 50%
• Thermoelectrics 50%
• Surface Roughness 50%
• Buffer Layer 50%
• X-Ray Diffractogram 50%
• Lattice Mismatch 50%
• III-V Semiconductor 50%
• IV-VI Semiconductor 50%

Keyphrases

• Interfacial Misfit Array 100%
• SnTe Thin Films 10%
• In-plane Ferroelectricity 10%
• High Thermoelectric Performance 10%
• Tellurium Films 10%
• Tin Telluride 10%
• IV-VI Semiconductors 10%