Growth, crystal structure, and properties of epitaxial BiSc O3 thin films

Susan Trolier-Mckinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, Eiji Takayama-Muromachi, Igor Levin

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20 Scopus citations


Epitaxial thin films of BiSc O3 -a compound thermodynamically unstable under ambient conditions-were grown on BiFe O3 -buffered SrTi O3 substrates. X-ray diffraction confirmed the reasonable crystalline quality of the films with a full width at half maximum of 0.58° in ω (004 reflection), 0.80° in φ (222 reflection), and 0.28° in θ. The epitaxial thin films of BiSc O3 on SrTi O3 retain the principal structural features of bulk BiSc O3 (i.e., octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell 22ac ×2ac ×4ac (ac ≈4 Å refers to the lattice parameter of an ideal cubic perovskite). Films grown on {100} substrates adopt the bulk monoclinic structure, whereas films on the (110) substrates appear to exhibit an orthorhombic symmetry. The dielectric permittivities were modest (≈30) with low loss tangents (<1% at low fields); no maxima were observed over a temperature range of -200 to +350 °C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.

Original languageEnglish (US)
Article number044102
JournalJournal of Applied Physics
Issue number4
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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