@inproceedings{6dec2bd6e7b34126a053437ea5d0c57a,
title = "Growth kinetics and polytype stability in halide chemical vapor deposition of SiC",
abstract = "Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150°C. Silicon carbide crystals were deposited at growth rates in the 100-300 um/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.",
author = "S. Nigam and Chung, {H. J.} and Huh, {S. W.} and J. Grim and Polyakov, {A. Y.} and Fanton, {M. A.} and B. Weiland and Snyder, {D. W.} and M. Skowronski",
year = "2006",
doi = "10.4028/0-87849-425-1.27",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "27--30",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}