Growth kinetics study in halide chemical vapor deposition of SiC

S. Nigam, H. J. Chung, A. Y. Polyakov, M. A. Fanton, B. E. Weiland, D. W. Snyder, M. Skowronski

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

Original languageEnglish (US)
Pages (from-to)112-122
Number of pages11
JournalJournal of Crystal Growth
Issue number1-2
StatePublished - Oct 15 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Growth kinetics study in halide chemical vapor deposition of SiC'. Together they form a unique fingerprint.

Cite this