Abstract
Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.
Original language | English (US) |
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Pages (from-to) | 112-122 |
Number of pages | 11 |
Journal | Journal of Crystal Growth |
Volume | 284 |
Issue number | 1-2 |
DOIs | |
State | Published - Oct 15 2005 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry