Growth kinetics study in halide chemical vapor deposition of SiC

S. Nigam; H. J. Chung; A. Y. Polyakov; M. A. Fanton; B. E. Weiland; D. W. Snyder; M. Skowronski

doi:10.1016/j.jcrysgro.2005.06.027

Growth kinetics study in halide chemical vapor deposition of SiC

S. Nigam
, H. J. Chung
, A. Y. Polyakov
, M. A. Fanton
, B. E. Weiland
, D. W. Snyder
, M. Skowronski

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

Original language	English (US)
Pages (from-to)	112-122
Number of pages	11
Journal	Journal of Crystal Growth
Volume	284
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.06.027
State	Published - Oct 15 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.06.027

Cite this

@article{9c60fb56ce694cf0921a8a56b4583490,

title = "Growth kinetics study in halide chemical vapor deposition of SiC",

abstract = "Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.",

author = "S. Nigam and Chung, \{H. J.\} and Polyakov, \{A. Y.\} and Fanton, \{M. A.\} and Weiland, \{B. E.\} and Snyder, \{D. W.\} and M. Skowronski",

note = "Funding Information: This work was supported by ONR Grants No. N00014-02-1-0533 and N00014-03-1-0005.",

year = "2005",

month = oct,

day = "15",

doi = "10.1016/j.jcrysgro.2005.06.027",

language = "English (US)",

volume = "284",

pages = "112--122",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Growth kinetics study in halide chemical vapor deposition of SiC

AU - Nigam, S.

AU - Chung, H. J.

AU - Polyakov, A. Y.

AU - Fanton, M. A.

AU - Weiland, B. E.

AU - Snyder, D. W.

AU - Skowronski, M.

N1 - Funding Information: This work was supported by ONR Grants No. N00014-02-1-0533 and N00014-03-1-0005.

PY - 2005/10/15

Y1 - 2005/10/15

N2 - Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

AB - Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

UR - https://www.scopus.com/pages/publications/25144474905

UR - https://www.scopus.com/pages/publications/25144474905#tab=citedBy

U2 - 10.1016/j.jcrysgro.2005.06.027

DO - 10.1016/j.jcrysgro.2005.06.027

M3 - Article

AN - SCOPUS:25144474905

SN - 0022-0248

VL - 284

SP - 112

EP - 122

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Growth kinetics study in halide chemical vapor deposition of SiC

Abstract

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