@inproceedings{1fdf426320d34d1e9e960033adc81f8b,
title = "Growth mechanisms and size-dependent characteristics of Si and Si 1-xGex nanowires",
abstract = "Si and Si1-xGexnanowires are of interest for nanoscale electronics, sensors and photovoltaics. These structures are commonly formed by chemical vapor deposition via a metal-mediated vapor-liquid-solid mechanism using SiH4and GeH4sources. The effect of growth conditions on the growth rate and composition of Si1-xGe xwas investigated. This work reveals a difference in the mechanism of incorporation of Si into Si1-xGexnanowires compared to Si nanowire growth which is believed to arise as a result of gas phase interactions between SiH4and GeH4. The growth of Si 1-xGex/Si axial heterostructured nanowires was also investigated. Compositional analysis indicates that the Ge profile exhibits turn-on and turn-off transients which are associated with the time required to saturate and deplete Ge from the Au-Si-Ge catalyst. This leads to an increase in the interfacial width with increasing nanowire diameter.",
author = "Redwing, {J. M.} and P. Nimmatoori and Lew, {K. K.} and X. Zhang and Q. Zhang and Clark, {T. E.} and L. Pan and Dickey, {E. C.}",
year = "2009",
doi = "10.1149/1.3207718",
language = "English (US)",
isbn = "9781566777452",
series = "ECS Transactions",
number = "8 PART 2",
pages = "1145--1152",
booktitle = "ECS Transactions - EuroCVD 17/CVD 17",
edition = "8 PART 2",
note = "17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society ; Conference date: 04-10-2009 Through 09-10-2009",
}