Growth of α' nitrogen martensite and feni films using (001)silicon substrates

Trevor E. Clark; Mark R. Visokay; Nanchang Zhu; Robert Sinclair

doi:10.1109/20.538671

Growth of α' nitrogen martensite and feni films using (001)silicon substrates

Trevor E. Clark
, Mark R. Visokay
, Nanchang Zhu
, Robert Sinclair

Materials Characterization Lab

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, epitaxial, single-phase (001) textured a' nitrogen-martensite films have been grown successfully on (001) Si substrates with a Ag reaction-barrier layer using conventional reactive sputtering. The growth orientation was obtained by X-ray -scans: Si(001)IIAg(001)llα'(001)//Si[100]IIAg[100]llα'[110]. In addition, (001) textured Fe₁₆N₂ or a" nitrogen-martensite which forms from an ordering of the N atoms in the α', was detected in the films after ex-situ annealing. High resolution electron microscopy studies reveal that α' martensite has good epitaxy with the Ag underlayer. Single-crystal formation of the martensites, however, is impeded by the intersection of Ag twins with the Ag/Fe-N interface. Single phase α' was not detected in any of the as-deposited films grown under various substrate temperatures (10-150°C) and pressures (2-SmTorr).

Original language	English (US)
Pages (from-to)	3503-3505
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 1
DOIs	https://doi.org/10.1109/20.538671
State	Published - 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/20.538671

Cite this

@article{6699c9bb7f2846909a226595c14c453e,

title = "Growth of α' nitrogen martensite and feni films using (001)silicon substrates",

abstract = "In this work, epitaxial, single-phase (001) textured a' nitrogen-martensite films have been grown successfully on (001) Si substrates with a Ag reaction-barrier layer using conventional reactive sputtering. The growth orientation was obtained by X-ray -scans: Si(001)IIAg(001)llα'(001)//Si[100]IIAg[100]llα'[110]. In addition, (001) textured Fe16N2 or a{"} nitrogen-martensite which forms from an ordering of the N atoms in the α', was detected in the films after ex-situ annealing. High resolution electron microscopy studies reveal that α' martensite has good epitaxy with the Ag underlayer. Single-crystal formation of the martensites, however, is impeded by the intersection of Ag twins with the Ag/Fe-N interface. Single phase α' was not detected in any of the as-deposited films grown under various substrate temperatures (10-150°C) and pressures (2-SmTorr).",

author = "Clark, \{Trevor E.\} and Visokay, \{Mark R.\} and Nanchang Zhu and Robert Sinclair",

year = "1996",

doi = "10.1109/20.538671",

language = "English (US)",

volume = "32",

pages = "3503--3505",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 1",

}

TY - JOUR

T1 - Growth of α' nitrogen martensite and feni films using (001)silicon substrates

AU - Clark, Trevor E.

AU - Visokay, Mark R.

AU - Zhu, Nanchang

AU - Sinclair, Robert

PY - 1996

Y1 - 1996

N2 - In this work, epitaxial, single-phase (001) textured a' nitrogen-martensite films have been grown successfully on (001) Si substrates with a Ag reaction-barrier layer using conventional reactive sputtering. The growth orientation was obtained by X-ray -scans: Si(001)IIAg(001)llα'(001)//Si[100]IIAg[100]llα'[110]. In addition, (001) textured Fe16N2 or a" nitrogen-martensite which forms from an ordering of the N atoms in the α', was detected in the films after ex-situ annealing. High resolution electron microscopy studies reveal that α' martensite has good epitaxy with the Ag underlayer. Single-crystal formation of the martensites, however, is impeded by the intersection of Ag twins with the Ag/Fe-N interface. Single phase α' was not detected in any of the as-deposited films grown under various substrate temperatures (10-150°C) and pressures (2-SmTorr).

AB - In this work, epitaxial, single-phase (001) textured a' nitrogen-martensite films have been grown successfully on (001) Si substrates with a Ag reaction-barrier layer using conventional reactive sputtering. The growth orientation was obtained by X-ray -scans: Si(001)IIAg(001)llα'(001)//Si[100]IIAg[100]llα'[110]. In addition, (001) textured Fe16N2 or a" nitrogen-martensite which forms from an ordering of the N atoms in the α', was detected in the films after ex-situ annealing. High resolution electron microscopy studies reveal that α' martensite has good epitaxy with the Ag underlayer. Single-crystal formation of the martensites, however, is impeded by the intersection of Ag twins with the Ag/Fe-N interface. Single phase α' was not detected in any of the as-deposited films grown under various substrate temperatures (10-150°C) and pressures (2-SmTorr).

UR - https://www.scopus.com/pages/publications/0030247413

UR - https://www.scopus.com/pages/publications/0030247413#tab=citedBy

U2 - 10.1109/20.538671

DO - 10.1109/20.538671

M3 - Article

AN - SCOPUS:0030247413

SN - 0018-9464

VL - 32

SP - 3503

EP - 3505

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 1

ER -

Growth of α' nitrogen martensite and feni films using (001)silicon substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this