Growth of 2D semiconductors and topological insulators

Maria Hilse; Nicholas Trainor; Andrew R. Graves; Run Xiao; Max Stanley; Yongxi Ou; Derrick Shao Heng Liu; Roman Engel-Herbert; Anthony Richardella; Stephanie Law; Joan M. Redwing

doi:10.1016/B978-0-323-96027-4.00031-0

Growth of 2D semiconductors and topological insulators

Maria Hilse, Nicholas Trainor, Andrew R. Graves, Run Xiao, Max Stanley, Yongxi Ou, Derrick Shao Heng Liu, Roman Engel-Herbert, Anthony Richardella, Stephanie Law, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

2D semiconductors exhibiting strongly anisotropic properties and non-trivial topological phenomena offer new material opportunities to find solutions for the energy crisis and global warming. Re-discovered after a lot of work nearly four decades ago, renewed research efforts fueled by recent advances in thin film growth technology are directed towards accelerating 2D materials' discovery, facilitating their synthesis, and studying their intrinsic properties. This chapter summarizes pursued synthesis approaches and the resulting materials properties of the three most common materials' classes among the 2D van der Waals layered semiconductors and topological insulators; post transition metal monochalcogenides, transition metal dichalcogenides, and Bi/Sb-based sesquichalcogenides.

Original language	English (US)
Title of host publication	Comprehensive Semiconductor Science and Technology, Second Edition
Subtitle of host publication	Volumes 1-3
Publisher	Elsevier
Pages	V2:329-V2:375
Volume	2
ISBN (Electronic)	9780323958196
ISBN (Print)	9780323960274
DOIs	https://doi.org/10.1016/B978-0-323-96027-4.00031-0
State	Published - Jan 1 2024

All Science Journal Classification (ASJC) codes

General Engineering
General Materials Science

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10.1016/B978-0-323-96027-4.00031-0

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Hilse, M., Trainor, N., Graves, A. R., Xiao, R., Stanley, M., Ou, Y., Liu, D. S. H., Engel-Herbert, R., Richardella, A., Law, S., & Redwing, J. M. (2024). Growth of 2D semiconductors and topological insulators. In Comprehensive Semiconductor Science and Technology, Second Edition: Volumes 1-3 (Vol. 2, pp. V2:329-V2:375). Elsevier. https://doi.org/10.1016/B978-0-323-96027-4.00031-0

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AU - Trainor, Nicholas

AU - Graves, Andrew R.

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AU - Stanley, Max

AU - Ou, Yongxi

AU - Liu, Derrick Shao Heng

AU - Engel-Herbert, Roman

AU - Richardella, Anthony

AU - Law, Stephanie

AU - Redwing, Joan M.

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AB - 2D semiconductors exhibiting strongly anisotropic properties and non-trivial topological phenomena offer new material opportunities to find solutions for the energy crisis and global warming. Re-discovered after a lot of work nearly four decades ago, renewed research efforts fueled by recent advances in thin film growth technology are directed towards accelerating 2D materials' discovery, facilitating their synthesis, and studying their intrinsic properties. This chapter summarizes pursued synthesis approaches and the resulting materials properties of the three most common materials' classes among the 2D van der Waals layered semiconductors and topological insulators; post transition metal monochalcogenides, transition metal dichalcogenides, and Bi/Sb-based sesquichalcogenides.

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Growth of 2D semiconductors and topological insulators

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