Growth of 6H-SiC crystals with low boron concentration

M. A. Fanton; R. L. Cavalero; B. E. Weiland; R. G. Ray; D. W. Snyder; R. D. Gamble; E. J. Oslosky; W. J. Everson

doi:10.1016/j.jcrysgro.2005.11.045

Growth of 6H-SiC crystals with low boron concentration

M. A. Fanton, R. L. Cavalero, B. E. Weiland, R. G. Ray, D. W. Snyder, R. D. Gamble, E. J. Oslosky, W. J. Everson

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm³. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm³ subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm³. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm ³. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

Original language	English (US)
Pages (from-to)	363-366
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.11.045
State	Published - Jan 25 2006

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.11.045

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@article{f01ef1618bb3464da0189f1bacf7d48e,

title = "Growth of 6H-SiC crystals with low boron concentration",

abstract = "The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.",

author = "Fanton, {M. A.} and Cavalero, {R. L.} and Weiland, {B. E.} and Ray, {R. G.} and Snyder, {D. W.} and Gamble, {R. D.} and Oslosky, {E. J.} and Everson, {W. J.}",

note = "Funding Information: Authors thank Dr. A. Polyakov and Q. Li (Carnegie Mellon University) for Hall effect data and Drs. W. Mitchel and H. Smith (Wright Patterson AFB) for SIMS analysis of selected samples. This work was supported by the Air Force Research Laboratory through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0063.",

year = "2006",

month = jan,

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doi = "10.1016/j.jcrysgro.2005.11.045",

language = "English (US)",

volume = "287",

pages = "363--366",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Growth of 6H-SiC crystals with low boron concentration

AU - Fanton, M. A.

AU - Cavalero, R. L.

AU - Weiland, B. E.

AU - Ray, R. G.

AU - Snyder, D. W.

AU - Gamble, R. D.

AU - Oslosky, E. J.

AU - Everson, W. J.

N1 - Funding Information: Authors thank Dr. A. Polyakov and Q. Li (Carnegie Mellon University) for Hall effect data and Drs. W. Mitchel and H. Smith (Wright Patterson AFB) for SIMS analysis of selected samples. This work was supported by the Air Force Research Laboratory through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0063.

PY - 2006/1/25

Y1 - 2006/1/25

N2 - The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

AB - The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

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Growth of 6H-SiC crystals with low boron concentration

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