Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

S. K. Donner; Rik Blumenthal; J. L. Herman; Rajender Trehan; Ehud Furman; Nicholas Winograd

doi:10.1063/1.102207

Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

S. K. Donner, Rik Blumenthal, J. L. Herman, Rajender Trehan, Ehud Furman, Nicholas Winograd

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Abstract

Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.

Original language	English (US)
Pages (from-to)	1753-1755
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	17
DOIs	https://doi.org/10.1063/1.102207
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102207

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@article{294e86c0f62d4323990543ccf06fe8f9,

title = "Growth of Al on GaAs(001): Observation of interfacial submonolayer structure",

abstract = "Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.",

author = "Donner, {S. K.} and Rik Blumenthal and Herman, {J. L.} and Rajender Trehan and Ehud Furman and Nicholas Winograd",

year = "1989",

doi = "10.1063/1.102207",

language = "English (US)",

volume = "55",

pages = "1753--1755",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Growth of Al on GaAs(001)

T2 - Observation of interfacial submonolayer structure

AU - Donner, S. K.

AU - Blumenthal, Rik

AU - Herman, J. L.

AU - Trehan, Rajender

AU - Furman, Ehud

AU - Winograd, Nicholas

PY - 1989

Y1 - 1989

N2 - Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.

AB - Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.

UR - http://www.scopus.com/inward/record.url?scp=36549102879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549102879&partnerID=8YFLogxK

U2 - 10.1063/1.102207

DO - 10.1063/1.102207

M3 - Article

AN - SCOPUS:36549102879

SN - 0003-6951

VL - 55

SP - 1753

EP - 1755

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

Abstract

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