Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

S. K. Donner, Rik Blumenthal, J. L. Herman, Rajender Trehan, Ehud Furman, Nicholas Winograd

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.

Original languageEnglish (US)
Pages (from-to)1753-1755
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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