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Heterostructure Field-effect Transistors
100%
AlGaN Layer
100%
AlGaN-GaN
100%
GaN Layers
60%
High Electron Mobility Transistor
40%
X Ray Diffraction
20%
Microscopic Analysis
20%
Room Temperature
20%
Secondary Ion Mass Spectrometry
20%
Atomic Force Microscopy
20%
Power Density
20%
Spectroscopic Measurement
20%
Crystal Quality
20%
Surface Morphology
20%
Crystal Surface
20%
Low Leakage
20%
GaN Heterostructure
20%
Drain Bias
20%
Diffraction Force
20%
4H-SiC Substrates
20%
AlN Buffer Layer
20%
GaN Buffer
20%
Power Added Efficiency
20%
Engineering
Heterojunctions
100%
Field-Effect Transistor
100%
Interlayer
100%
Ray Diffraction
50%
Crystal Quality
50%
Room Temperature
50%
Atomic Force Microscopy
50%
Power Density
50%
Crystal Surface
50%
Surface Morphology
50%
Drain Bias
50%
Power Added Efficiency
50%
Earth and Planetary Sciences
Interlayer
100%
High Electron Mobility Transistors
100%
Heterojunctions
100%
Mass Spectroscopy
50%
Room Temperature
50%
X Ray Diffraction
50%
Atomic Force Microscopy
50%
Physics
Field Effect Transistor
100%
Heterojunctions
100%
High Electron Mobility Transistors
100%
X Ray Diffraction
50%
Room Temperature
50%
Atomic Force Microscopy
50%
Mass Spectroscopy
50%