Growth of bulk SiC by halide chemical vapor deposition

M. Fanton, M. Skowronski, D. Snyder, H. J. Chung, S. Nigam, B. Weiland, S. W. Huh

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations


A novel halide chemical vapor deposition (HCVD) process has been developed for bulk growth of high purity, single crystal 6H SiC. The effects of major process parameters including furnace temperature over the range of 1900-2150°C, reactor pressure over the range of 20-400 torr, reactant concentrations, and flow rates on the growth rate, crystallinity, and electrical properties of the single-crystal 6H boules grown by HCVD are described. Typical growth rates for the 6H polytype are on the order of 100-125 μm/h with a maximum observed rate of 180μm/h. Thicknesses up to 1 mm have been demonstrated. GDMS analyses of the purity of HCVD grown material is discussed and compared to 6H SiC produced by commercial PVT and HTCVD processes. Boron and aluminum concentrations less than 1.8 E15 atoms/cm3 were demonstrated.

Original languageEnglish (US)
Pages (from-to)87-90
Number of pages4
JournalMaterials Science Forum
Issue numberI
StatePublished - 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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