Growth of carbon nanotubes on GaAs

R. Engel-Herbert, Yukihiko Takagaki, T. Hesjedal

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.

Original languageEnglish (US)
Pages (from-to)4631-4634
Number of pages4
JournalMaterials Letters
Issue number23-24
StatePublished - Sep 2007

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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