Abstract
Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.
Original language | English (US) |
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Pages (from-to) | 4631-4634 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 61 |
Issue number | 23-24 |
DOIs | |
State | Published - Sep 2007 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering