Growth of carbon nanotubes on GaAs

R. Engel-Herbert; Yukihiko Takagaki; T. Hesjedal

doi:10.1016/j.matlet.2007.02.063

Growth of carbon nanotubes on GaAs

R. Engel-Herbert
, Yukihiko Takagaki
, T. Hesjedal

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.

Original language	English (US)
Pages (from-to)	4631-4634
Number of pages	4
Journal	Materials Letters
Volume	61
Issue number	23-24
DOIs	https://doi.org/10.1016/j.matlet.2007.02.063
State	Published - Sep 2007

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2007.02.063

Cite this

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title = "Growth of carbon nanotubes on GaAs",

abstract = "Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.",

author = "R. Engel-Herbert and Yukihiko Takagaki and T. Hesjedal",

note = "Funding Information: We gratefully acknowledge the support by the PDI (Berlin), and especially M. Ramsteiner for helping with the Raman measurements. Financial support came in parts from the NSERC of Canada and the University of Waterloo. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

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language = "English (US)",

volume = "61",

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journal = "Materials Letters",

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T1 - Growth of carbon nanotubes on GaAs

AU - Engel-Herbert, R.

AU - Takagaki, Yukihiko

AU - Hesjedal, T.

N1 - Funding Information: We gratefully acknowledge the support by the PDI (Berlin), and especially M. Ramsteiner for helping with the Raman measurements. Financial support came in parts from the NSERC of Canada and the University of Waterloo. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/9

Y1 - 2007/9

N2 - Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.

AB - Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.

UR - https://www.scopus.com/pages/publications/34548017186

UR - https://www.scopus.com/pages/publications/34548017186#tab=citedBy

U2 - 10.1016/j.matlet.2007.02.063

DO - 10.1016/j.matlet.2007.02.063

M3 - Article

AN - SCOPUS:34548017186

SN - 0167-577X

VL - 61

SP - 4631

EP - 4634

JO - Materials Letters

JF - Materials Letters

IS - 23-24

ER -

Growth of carbon nanotubes on GaAs

Abstract

All Science Journal Classification (ASJC) codes

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