Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

N. Samarth; H. Luo; J. K. Furdyna; S. B. Qadri; Y. R. Lee; A. K. Ramdas; N. Otsuka

doi:10.1063/1.101033

Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

N. Samarth
, H. Luo
, J. K. Furdyna
, S. B. Qadri
, Y. R. Lee
, A. K. Ramdas
, N. Otsuka

Physics

Research output: Contribution to journal › Article › peer-review

187 Scopus citations

Abstract

We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.

Original language	English (US)
Pages (from-to)	2680-2682
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	26
DOIs	https://doi.org/10.1063/1.101033
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.101033

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title = "Growth of cubic (zinc blende) CdSe by molecular beam epitaxy",

abstract = "We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 {\AA}, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.",

author = "N. Samarth and H. Luo and Furdyna, \{J. K.\} and Qadri, \{S. B.\} and Lee, \{Y. R.\} and Ramdas, \{A. K.\} and N. Otsuka",

year = "1989",

doi = "10.1063/1.101033",

language = "English (US)",

volume = "54",

pages = "2680--2682",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

AU - Samarth, N.

AU - Luo, H.

AU - Furdyna, J. K.

AU - Qadri, S. B.

AU - Lee, Y. R.

AU - Ramdas, A. K.

AU - Otsuka, N.

PY - 1989

Y1 - 1989

N2 - We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.

AB - We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.

UR - https://www.scopus.com/pages/publications/36549097305

UR - https://www.scopus.com/pages/publications/36549097305#tab=citedBy

U2 - 10.1063/1.101033

DO - 10.1063/1.101033

M3 - Article

AN - SCOPUS:36549097305

SN - 0003-6951

VL - 54

SP - 2680

EP - 2682

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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