Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

S. Madhavan; D. G. Schlom; A. Dabkowski; H. A. Dabkowska; Ying Liu

doi:10.1063/1.116399

Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

S. Madhavan, D. G. Schlom, A. Dabkowski, H. A. Dabkowska, Ying Liu

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.

Original language	English (US)
Pages (from-to)	559-561
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.116399
State	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.116399

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title = "Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films",

abstract = "Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.",

author = "S. Madhavan and Schlom, {D. G.} and A. Dabkowski and Dabkowska, {H. A.} and Ying Liu",

year = "1996",

doi = "10.1063/1.116399",

language = "English (US)",

volume = "68",

pages = "559--561",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

AU - Madhavan, S.

AU - Schlom, D. G.

AU - Dabkowski, A.

AU - Dabkowska, H. A.

AU - Liu, Ying

PY - 1996

Y1 - 1996

N2 - Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.

AB - Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.

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ER -

Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

Abstract

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