Growth of high-quality Bi₂Se₃ topological insulators using (Bi_1-xIn_x)₂Se₃ buffer layers

Keyphrases

• Topological Insulator 100%
• Bismuth Telluride 100%
• Buffer Layer 100%
• In Films 33%
• Molecular Beam Epitaxy 33%
• Electrical Properties 33%
• Growth Parameters 33%
• Sapphire Substrate 33%
• Annealing Process 33%
• Lattice Matching 33%
• Growth Method 33%
• Co-deposition 33%
• Carrier Density 33%
• Film Quality 33%
• Sequential Growth 33%
• Bi2Te3 Films 33%
• Optimum Growth 33%
• Sequential Annealing 33%

Material Science

• Film 100%
• Buffer Layer 100%
• Molecular Beam Epitaxy 25%
• Sapphire 25%
• Carrier Concentration 25%

Engineering

• Buffer Layer 100%
• Sapphire Substrate 33%
• Growth Parameter 33%
• Film Quality 33%