Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition

Y. Gim, K. T. Gahagan, C. Kwon, M. Hawley, V. Gopalan, J. M. Robinson, T. E. Mitchell, Q. X. Jia

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report on the epitaxial growth of LiNbO3 (112̄0) films on sapphire (112̄0) substrates using pulsed laser deposition. We have used a Li-enriched target of Li2NbO3 to compensate for the loss of Li at high deposition temperatures of 600-800 °C. X-ray θ-2θ scans reveal that the crystal orientation of our LiNbO3 films is very sensitive to the deposition temperature and oxygen pressure. To obtain a single (112̄0) orientation, we need to use a deposition temperature of 800 °C and an oxygen pressure of 10-5 Torr. Otherwise, an extra (0001) orientation of LiNbO3 always occurs. From a rocking curve of the (112̄0) peak, we have measured a full width at half maximum of 0.3°, implying that our LiNbO3 (112̄0) film is highly oriented. The measured dielectric constants of the LiNbO3 (0001) and (112̄0) films at 1 MHz are 80 and 70, respectively.

Original languageEnglish (US)
Pages (from-to)91-102
Number of pages12
JournalIntegrated Ferroelectrics
Issue number1-4
StatePublished - 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Ceramics and Composites
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Control and Systems Engineering


Dive into the research topics of 'Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition'. Together they form a unique fingerprint.

Cite this