Growth of mgb2 thin films in situ by rf magnetron sputtering with a pocket heater

Sanghan Lee, Ke Chen, Seung Hyup Baek, Wenqing Dai, Brian H. Moeckly, Qi Li, Xiaoxing Xi, Mark S. Rzchowski, Chang Beom Eom

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have grown MgB2 thin films using RF magnetron sputtering combined with a pocket heater. This technique relies on a low-pressure environment for sputter deposition of boron and a high-pressure environment for thermal evaporation of Mg. We have obtained superconducting MgB2 thin films using substrate temperatures of 480-540°C and Mg furnace temperatures of 730-750°C. The Tc onset of the thin films increased from 21.6 K to 35 K with increasing substrate temperature due to better crystallization. Higher boron deposition rates also increase Tc. The highest J c of the films at 5 K and near zero magnetic field is 1.5 MA/cm 2 which is comparatively lower than the films grown using a pocket heater with boron deposition by chemical vapor deposition or electron beam evaporation. The chemical composition analysis by WDS exhibits a high concentration of oxygen and carbon in the MgB2 films, which is due to a high background base pressure and an impure B sputtering target. These results suggest that the, and resistivity of films are mainly determined by an inhomogeneous microstructure and superconducting percolation paths through impurity phases such as MgO. By comparison with carbon or oxygen doped films, the high impurity content in the sputtered MgB2 films might act as method to achieve high.

Original languageEnglish (US)
Article number5153187
Pages (from-to)2811-2814
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Issue number3
StatePublished - Jun 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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