TY - JOUR
T1 - Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
AU - Liu, Derrick S.H.
AU - Hilse, Maria
AU - Lupini, Andrew R.
AU - Redwing, Joan M.
AU - Engel-Herbert, Roman
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/8/25
Y1 - 2023/8/25
N2 - γ-InSe is a semiconductor that holds promising potential in high-performance field-effect transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has proven challenging because of the difficulty in precise control of stoichiometry and the coexistence of different indium selenide phases. In this study, we demonstrate the wafer-scale combinatorial approach to map out the growth window as functions of the Se/In ratio and growth temperature for γ-InSe on the Si(111) 7 × 7 substrate in molecular beam epitaxy. X-ray diffraction (XRD) was used to identify the indium selenide phases, while atomic force microscopy revealed four distinct surface morphologies of γ-InSe, enabling a discussion of the growth mechanisms associated with each morphology. Cross-sectional atomic resolution scanning transmission electron microscopy confirmed that the film was of high crystalline quality and had nearly single-phase γ-InSe. Our comprehensive study elucidates the In-Se phase map for thin film growth parameters, providing invaluable landmarks for the reproducible synthesis of high-quality γ-InSe layers.
AB - γ-InSe is a semiconductor that holds promising potential in high-performance field-effect transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has proven challenging because of the difficulty in precise control of stoichiometry and the coexistence of different indium selenide phases. In this study, we demonstrate the wafer-scale combinatorial approach to map out the growth window as functions of the Se/In ratio and growth temperature for γ-InSe on the Si(111) 7 × 7 substrate in molecular beam epitaxy. X-ray diffraction (XRD) was used to identify the indium selenide phases, while atomic force microscopy revealed four distinct surface morphologies of γ-InSe, enabling a discussion of the growth mechanisms associated with each morphology. Cross-sectional atomic resolution scanning transmission electron microscopy confirmed that the film was of high crystalline quality and had nearly single-phase γ-InSe. Our comprehensive study elucidates the In-Se phase map for thin film growth parameters, providing invaluable landmarks for the reproducible synthesis of high-quality γ-InSe layers.
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U2 - 10.1021/acsanm.3c02602
DO - 10.1021/acsanm.3c02602
M3 - Article
AN - SCOPUS:85168486255
SN - 2574-0970
VL - 6
SP - 15029
EP - 15037
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 16
ER -