Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
- Derrick S.H. Liu
- , Maria Hilse
- , Andrew R. Lupini
- , Joan M. Redwing
- , Roman Engel-Herbert
Research output: Contribution to journal › Article › peer-review
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