Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)

B. Z. Liu; J. Nogami

doi:10.1088/0957-4484/14/8/306

Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)

B. Z. Liu, J. Nogami

Nanofabrication Laboratory

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

It is possible to produce a parallel array of nanowires by growing thin layers of rare-earth (RE) silicides on a single-domain vicinal Si(001) surface. To achieve this result, the growth of compact silicide islands that generally coexist with the nanowires must be suppressed. Nanowire growth can be optimized by manipulating the growth kinetics, or by judicious choice of the RE metal. Gd appears to grow nanowires over a wider range of conditions than other metals. Some of the differences in behaviour between metals can be related to the biaxial strain in different silicide phases.

Original language	English (US)
Pages (from-to)	873-877
Number of pages	5
Journal	Nanotechnology
Volume	14
Issue number	8
DOIs	https://doi.org/10.1088/0957-4484/14/8/306
State	Published - Aug 1 2003

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/14/8/306

Cite this

@article{315483bcce1648f48c12eec1db990db9,

title = "Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)",

abstract = "It is possible to produce a parallel array of nanowires by growing thin layers of rare-earth (RE) silicides on a single-domain vicinal Si(001) surface. To achieve this result, the growth of compact silicide islands that generally coexist with the nanowires must be suppressed. Nanowire growth can be optimized by manipulating the growth kinetics, or by judicious choice of the RE metal. Gd appears to grow nanowires over a wider range of conditions than other metals. Some of the differences in behaviour between metals can be related to the biaxial strain in different silicide phases.",

author = "Liu, {B. Z.} and J. Nogami",

year = "2003",

month = aug,

day = "1",

doi = "10.1088/0957-4484/14/8/306",

language = "English (US)",

volume = "14",

pages = "873--877",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)

AU - Liu, B. Z.

AU - Nogami, J.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - It is possible to produce a parallel array of nanowires by growing thin layers of rare-earth (RE) silicides on a single-domain vicinal Si(001) surface. To achieve this result, the growth of compact silicide islands that generally coexist with the nanowires must be suppressed. Nanowire growth can be optimized by manipulating the growth kinetics, or by judicious choice of the RE metal. Gd appears to grow nanowires over a wider range of conditions than other metals. Some of the differences in behaviour between metals can be related to the biaxial strain in different silicide phases.

AB - It is possible to produce a parallel array of nanowires by growing thin layers of rare-earth (RE) silicides on a single-domain vicinal Si(001) surface. To achieve this result, the growth of compact silicide islands that generally coexist with the nanowires must be suppressed. Nanowire growth can be optimized by manipulating the growth kinetics, or by judicious choice of the RE metal. Gd appears to grow nanowires over a wider range of conditions than other metals. Some of the differences in behaviour between metals can be related to the biaxial strain in different silicide phases.

UR - http://www.scopus.com/inward/record.url?scp=0041506993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041506993&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/14/8/306

DO - 10.1088/0957-4484/14/8/306

M3 - Article

AN - SCOPUS:0041506993

SN - 0957-4484

VL - 14

SP - 873

EP - 877

JO - Nanotechnology

JF - Nanotechnology

IS - 8

ER -

Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this