Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition

Thomas E. Vandervelde; Piyush Kumar; Takeshi Kobayashi; Jennifer L. Gray; Tim Pernell; Jerrold A. Floro; Robert Hull; John C. Bean

doi:10.1063/1.1636268

Growth of quantum fortress structures in Si _{1 - x}Ge _x/Si via combinatorial deposition

Thomas E. Vandervelde, Piyush Kumar, Takeshi Kobayashi, Jennifer L. Gray, Tim Pernell, Jerrold A. Floro, Robert Hull, John C. Bean

Materials Characterization Lab

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The morphologies that develop when Si _1-xGe _x was deposited on Si (001) under kinetically controlled conditions of 550°C growth temperature and 1 Å/s growth rate were described. The first three-dimensional structures that developed to relax the strain in the film were pits. Approximate values for the thickness and Ge fraction for which these structures form were found. The results show that the successive transformations of the surface structure from pits to quantum fortress (QF) to ridges are strain driven.

Original language	English (US)
Pages (from-to)	5205-5207
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	25
DOIs	https://doi.org/10.1063/1.1636268
State	Published - Dec 22 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1636268

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title = "Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition",

abstract = "The morphologies that develop when Si 1-xGe x was deposited on Si (001) under kinetically controlled conditions of 550°C growth temperature and 1 {\AA}/s growth rate were described. The first three-dimensional structures that developed to relax the strain in the film were pits. Approximate values for the thickness and Ge fraction for which these structures form were found. The results show that the successive transformations of the surface structure from pits to quantum fortress (QF) to ridges are strain driven.",

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AU - Vandervelde, Thomas E.

AU - Kumar, Piyush

AU - Kobayashi, Takeshi

AU - Gray, Jennifer L.

AU - Pernell, Tim

AU - Floro, Jerrold A.

AU - Hull, Robert

AU - Bean, John C.

PY - 2003/12/22

Y1 - 2003/12/22

N2 - The morphologies that develop when Si 1-xGe x was deposited on Si (001) under kinetically controlled conditions of 550°C growth temperature and 1 Å/s growth rate were described. The first three-dimensional structures that developed to relax the strain in the film were pits. Approximate values for the thickness and Ge fraction for which these structures form were found. The results show that the successive transformations of the surface structure from pits to quantum fortress (QF) to ridges are strain driven.

AB - The morphologies that develop when Si 1-xGe x was deposited on Si (001) under kinetically controlled conditions of 550°C growth temperature and 1 Å/s growth rate were described. The first three-dimensional structures that developed to relax the strain in the film were pits. Approximate values for the thickness and Ge fraction for which these structures form were found. The results show that the successive transformations of the surface structure from pits to quantum fortress (QF) to ridges are strain driven.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Growth of quantum fortress structures in Si _{1 - x}Ge _x/Si via combinatorial deposition

Abstract

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