Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate

Cui Zu Chang; K. E. He; Li Li Wang; Xu Cun Ma; Min Hao Liu; Zuo Cheng Zhang; X. I. Chen; Ya Yu Wang; Qi Kun Xue

doi:10.1142/S2010324711000033

Growth of Quantum Well Films of Topological Insulator Bi ₂ Se ₃ on Insulating Substrate

Cui Zu Chang, K. E. He, Li Li Wang, Xu Cun Ma, Min Hao Liu, Zuo Cheng Zhang, X. I. Chen, Ya Yu Wang, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi₂Se₃, a typical three-dimensional topological insulator, have been grown on α-Al₂O₃ (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi₂Se₃ thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

Original language	English (US)
Pages (from-to)	21-25
Number of pages	5
Journal	SPIN
Volume	1
Issue number	1
DOIs	https://doi.org/10.1142/S2010324711000033
State	Published - Jun 1 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1142/S2010324711000033

Cite this

@article{ea3cf1e729674ea9bb57220f836fdc67,

title = "Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate",

abstract = "Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.",

author = "Chang, {Cui Zu} and He, {K. E.} and Wang, {Li Li} and Ma, {Xu Cun} and Liu, {Min Hao} and Zhang, {Zuo Cheng} and Chen, {X. I.} and Wang, {Ya Yu} and Xue, {Qi Kun}",

note = "Funding Information: This work was supported by National Science Foundation (Grant No. 10974237) and Ministry of Science and Technology of China (Grant No. 2009CB929400). Publisher Copyright: {\textcopyright} 2011 World Scientific Publishing Company.",

year = "2011",

month = jun,

day = "1",

doi = "10.1142/S2010324711000033",

language = "English (US)",

volume = "1",

pages = "21--25",

journal = "SPIN",

issn = "2010-3247",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "1",

}

TY - JOUR

T1 - Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate

AU - Chang, Cui Zu

AU - He, K. E.

AU - Wang, Li Li

AU - Ma, Xu Cun

AU - Liu, Min Hao

AU - Zhang, Zuo Cheng

AU - Chen, X. I.

AU - Wang, Ya Yu

AU - Xue, Qi Kun

N1 - Funding Information: This work was supported by National Science Foundation (Grant No. 10974237) and Ministry of Science and Technology of China (Grant No. 2009CB929400). Publisher Copyright: © 2011 World Scientific Publishing Company.

PY - 2011/6/1

Y1 - 2011/6/1

N2 - Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

AB - Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

UR - http://www.scopus.com/inward/record.url?scp=84863261677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863261677&partnerID=8YFLogxK

U2 - 10.1142/S2010324711000033

DO - 10.1142/S2010324711000033

M3 - Article

AN - SCOPUS:84863261677

SN - 2010-3247

VL - 1

SP - 21

EP - 25

JO - SPIN

JF - SPIN

IS - 1

ER -

Growth of Quantum Well Films of Topological Insulator Bi ₂ Se ₃ on Insulating Substrate

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this