Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate

Cui Zu Chang, K. E. He, Li Li Wang, Xu Cun Ma, Min Hao Liu, Zuo Cheng Zhang, X. I. Chen, Ya Yu Wang, Qi Kun Xue

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

Original languageEnglish (US)
Pages (from-to)21-25
Number of pages5
Issue number1
StatePublished - Jun 1 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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