Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate

Cui Zu Chang; K. E. He; Li Li Wang; Xu Cun Ma; Min Hao Liu; Zuo Cheng Zhang; X. I. Chen; Ya Yu Wang; Qi Kun Xue

doi:10.1142/S2010324711000033

Growth of Quantum Well Films of Topological Insulator Bi ₂ Se ₃ on Insulating Substrate

Cui Zu Chang
, K. E. He
, Li Li Wang
, Xu Cun Ma
, Min Hao Liu
, Zuo Cheng Zhang
, X. I. Chen
, Ya Yu Wang
, Qi Kun Xue

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi₂Se₃, a typical three-dimensional topological insulator, have been grown on α-Al₂O₃ (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi₂Se₃ thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

Original language	English (US)
Pages (from-to)	21-25
Number of pages	5
Journal	SPIN
Volume	1
Issue number	1
DOIs	https://doi.org/10.1142/S2010324711000033
State	Published - Jun 1 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1142/S2010324711000033

Cite this

@article{ea3cf1e729674ea9bb57220f836fdc67,

title = "Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate",

abstract = "Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.",

author = "Chang, \{Cui Zu\} and He, \{K. E.\} and Wang, \{Li Li\} and Ma, \{Xu Cun\} and Liu, \{Min Hao\} and Zhang, \{Zuo Cheng\} and Chen, \{X. I.\} and Wang, \{Ya Yu\} and Xue, \{Qi Kun\}",

note = "Publisher Copyright: {\textcopyright} 2011 World Scientific Publishing Company.",

year = "2011",

month = jun,

day = "1",

doi = "10.1142/S2010324711000033",

language = "English (US)",

volume = "1",

pages = "21--25",

journal = "SPIN",

issn = "2010-3247",

publisher = "World Scientific",

number = "1",

}

TY - JOUR

T1 - Growth of Quantum Well Films of Topological Insulator Bi 2 Se 3 on Insulating Substrate

AU - Chang, Cui Zu

AU - He, K. E.

AU - Wang, Li Li

AU - Ma, Xu Cun

AU - Liu, Min Hao

AU - Zhang, Zuo Cheng

AU - Chen, X. I.

AU - Wang, Ya Yu

AU - Xue, Qi Kun

PY - 2011/6/1

Y1 - 2011/6/1

N2 - Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

AB - Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

UR - https://www.scopus.com/pages/publications/84863261677

UR - https://www.scopus.com/pages/publications/84863261677#tab=citedBy

U2 - 10.1142/S2010324711000033

DO - 10.1142/S2010324711000033

M3 - Article

AN - SCOPUS:84863261677

SN - 2010-3247

VL - 1

SP - 21

EP - 25

JO - SPIN

JF - SPIN

IS - 1

ER -

Growth of Quantum Well Films of Topological Insulator Bi ₂ Se ₃ on Insulating Substrate

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this