Growth of YBa2Cu3O7-δ on co implanted substrates

C. Weber, F. Kahlmann, J. Schubert, W. Zander, B. Kabius, U. Breuer, Ch Buchal

Research output: Contribution to journalArticlepeer-review


We have studied films of YBa2Cu3O7-δ (YBCO) grown on SrTiO3 substrates, which were implanted with high doses of Co (1 X 1016-5 X 1017 ions/cm2 at 100 keV). The indirect modification of YBCO by local ion implantation of Co into the substrate is investigated to evaluate the feasibility of a new planar technology for the fabrication of Josephson junctions. The modified YBCO might become a barrier region of a Josephson junction. We found a strong diffusion of the implanted Co ions out of the substrates into the YBCO films during the deposition process, forming YBa2Cu3-xCoxO7-δ. Our EDX and SNMS analyses show that the Co concentration x is homogeneous across the films. YBa2Cu3-xCoxO7-δ is well known to be an excellent barrier material for SNS-type Josephson junctions. Using a 1.4 μm thick photoresist mask, we have locally implanted Co into the substrates to study the lateral diffusion of Co into the YBCO film above the non-implanted region. We performed EDX analysis on cross-sectional TEM samples and found strong lateral diffusion of Co from the implanted substrate within the YBCO film located above the non-implanted region.

Original languageEnglish (US)
Pages (from-to)208-216
Number of pages9
JournalPhysica C: Superconductivity and its applications
Issue number3-4
StatePublished - Sep 1 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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