Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Tensile Stress 100%
• Stress Evolution 100%
• GaN Films 100%
• AlN Buffer Layer 100%
• Growth Stress 100%
• In Films 66%
• Room Temperature 66%
• Grain Size 33%
• In Situ 33%
• Atomic Force Microscopy Image 33%
• Grain Boundary 33%
• Sapphire 33%
• Surface Crack 33%
• Dominant Source 33%
• Stress Profile 33%
• Surface Morphology 33%
• Multiple Beams 33%
• Morphological Evolution 33%
• Dominant Features 33%
• Lateral Size 33%
• Free Volume 33%
• Thermal Expansion Mismatch 33%
• Intrinsic Stress 33%
• Brittle Fracture 33%
• Stress Value 33%

Engineering

• Metal Organic Chemical Vapor Deposition 100%
• Tensile Stress σ 100%
• Buffer Layer 100%
• Room Temperature 66%
• Atomic Force Microscopy 33%
• Deposited Film 33%
• Data Show 33%
• Dominant Source 33%
• Tensiles 33%
• Cooled Sample 33%
• Surface Crack 33%
• Free Volume 33%
• Critical Thickness 33%
• Intrinsic Stress 33%
• Brittle Fracture 33%

Material Science

• Film 100%
• Metal-Organic Chemical Vapor Deposition 100%
• Aluminum Nitride 100%
• Buffer Layer 100%
• Ultimate Tensile Strength 75%
• Grain Size 25%
• Sapphire 25%
• Thick Films 25%
• Morphology 25%
• Thermal Expansion 25%
• Surface Crack 25%
• Free Volume 25%
• Brittle Fracture 25%
• Grain Boundary 25%
• Atomic Force Microscopy 25%