Abstract
We use the Hanle effect to study spin relaxation in ZnxCd 1-xSe epilayers grown on lattice-matched InP substrates. We study three samples with a fixed composition (x = 0.4) and with varying levels of n-doping, as well as an undoped sample with x = 0.5. Our measurements show that the spin relaxation time changes non-monotonically as a function of carrier density, with a maximum transverse spin lifetime of ∼10.5 ns at low temperatures for a sample doped near the metal-insulator transition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 195-199 |
| Number of pages | 5 |
| Journal | Journal of Superconductivity and Novel Magnetism |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics