Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

O. Maksimov; X. Zhou; M. C. Tamargo; N. Samarth

doi:10.1016/j.physe.2005.12.079

Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

O. Maksimov
, X. Zhou
, M. C. Tamargo
, N. Samarth

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be_0.03 Zn_0.97 Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe / Be_0.03 Zn_0.97 Se QDs.

Original language	English (US)
Pages (from-to)	399-402
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2005.12.079
State	Published - May 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2005.12.079

Cite this

@article{59845d8f10214376b80532f75ce53aff,

title = "Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots",

abstract = "We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03 Zn0.97 Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe / Be0.03 Zn0.97 Se QDs.",

author = "O. Maksimov and X. Zhou and Tamargo, \{M. C.\} and N. Samarth",

note = "Funding Information: O.M. and N.S. acknowledge the support of the DARPA-QUIST program through the Center for Spintronics and Quantum Computation, University of California-Santa Barbara. X. Z. and M. C. T. were supported by NSF through Grant ECS0217646. ",

year = "2006",

month = may,

doi = "10.1016/j.physe.2005.12.079",

language = "English (US)",

volume = "32",

pages = "399--402",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

AU - Maksimov, O.

AU - Zhou, X.

AU - Tamargo, M. C.

AU - Samarth, N.

N1 - Funding Information: O.M. and N.S. acknowledge the support of the DARPA-QUIST program through the Center for Spintronics and Quantum Computation, University of California-Santa Barbara. X. Z. and M. C. T. were supported by NSF through Grant ECS0217646.

PY - 2006/5

Y1 - 2006/5

N2 - We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03 Zn0.97 Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe / Be0.03 Zn0.97 Se QDs.

AB - We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03 Zn0.97 Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe / Be0.03 Zn0.97 Se QDs.

UR - https://www.scopus.com/pages/publications/33646204237

UR - https://www.scopus.com/pages/publications/33646204237#tab=citedBy

U2 - 10.1016/j.physe.2005.12.079

DO - 10.1016/j.physe.2005.12.079

M3 - Article

AN - SCOPUS:33646204237

SN - 1386-9477

VL - 32

SP - 399

EP - 402

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

ER -

Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

Abstract

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