Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists

Keyphrases

• Low Power 100%
• Amorphous Carbon Film 100%
• Planarization 100%
• Hardening Process 100%
• Bilayer Resist 100%
• Room Temperature 50%
• Amorphous Carbon 50%
• Large Distances 50%
• Excimer Laser 50%
• Deposition Conditions 50%
• Sub-micrometer 50%
• Processing Requirements 50%
• High Deposition Rate 50%
• RF Power 50%
• Planarization Layer 50%
• Ion Bombardment Energy 50%

Engineering

• Amorphous Carbon 100%
• Planarization 100%
• Room Temperature 33%
• Bias Voltage 33%
• Ion Implantation 33%
• Deposition Condition 33%
• Lithography 33%
• Photoresist 33%
• Excimer Laser 33%
• High Deposition Rate 33%

Material Science

• Film 100%
• Amorphous Carbon 100%
• Carbon Films 100%
• Lithography 33%
• Ion Bombardment 33%