TY - GEN
T1 - Harmonic enhancement of Gunn oscillations in GaN
AU - Sevik, C.
AU - Yilmaz, D. E.
AU - Bulutay, C.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.
AB - High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.
UR - http://www.scopus.com/inward/record.url?scp=33749483370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749483370&partnerID=8YFLogxK
U2 - 10.1063/1.1994078
DO - 10.1063/1.1994078
M3 - Conference contribution
AN - SCOPUS:33749483370
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 231
EP - 232
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -