He- induced nanocavities for the gettering of metallic impurities in silicon

E. Ntsoenzok; R. Delamare; D. Alquier; C. L. Liu; S. Ashok; M. O. Ruault

He- induced nanocavities for the gettering of metallic impurities in silicon

E. Ntsoenzok, R. Delamare, D. Alquier, C. L. Liu, S. Ashok, M. O. Ruault

Research output: Contribution to conference › Paper › peer-review

Abstract

Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.

Original language	English (US)
Pages	202-207
Number of pages	6
State	Published - 2004
Event	High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	High Purity Silicon VIII - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "He- induced nanocavities for the gettering of metallic impurities in silicon",

abstract = "Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.",

author = "E. Ntsoenzok and R. Delamare and D. Alquier and Liu, {C. L.} and S. Ashok and Ruault, {M. O.}",

year = "2004",

language = "English (US)",

pages = "202--207",

note = "High Purity Silicon VIII - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

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TY - CONF

T1 - He- induced nanocavities for the gettering of metallic impurities in silicon

AU - Ntsoenzok, E.

AU - Delamare, R.

AU - Alquier, D.

AU - Liu, C. L.

AU - Ashok, S.

AU - Ruault, M. O.

PY - 2004

Y1 - 2004

N2 - Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.

AB - Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.

UR - http://www.scopus.com/inward/record.url?scp=17044439137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044439137&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044439137

SP - 202

EP - 207

T2 - High Purity Silicon VIII - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

He- induced nanocavities for the gettering of metallic impurities in silicon

Abstract

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All Science Journal Classification (ASJC) codes

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