Abstract
Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.
Original language | English (US) |
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Pages | 202-207 |
Number of pages | 6 |
State | Published - 2004 |
Event | High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
Other | High Purity Silicon VIII - Proceedings of the International Symposium |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 10/3/04 → 10/8/04 |
All Science Journal Classification (ASJC) codes
- General Engineering